Indian Science Technology and Engineering facilities Map
Supplier Map
Service Map


Patent Details

Indian Institute of Technology (IIT) Roorkee 
Novel 2,4, M-Nitroaniline doped PES and an optically active guest-host polymer 
Y.S Negi, Chandra Vishwa Shanthia and R.C. Aiyerb 
Indian Institute of Technology (IIT) Roorkee 
Application type:
Granted - 2018-05-02 
Application Number:
Applied at:
Entered by:
Indian Institute of Technology (IIT) Roorkee 
This invention relates to a product based on host-guest system based on m-NA and PES using simple solution technique and casting thin film. Different compositions (1-20% w/w) based on m-NA/PES and films therefrom were developed. Frequency doubling (1064 nm to 532 nm) measurement and light conversion (red to green light) using Nd:YAG laser was used. For the design of organic materials suited for the use in optoelectronic device, Non-Linear Optical (NLO) chromophore (m-nitroaniline) was incorporated in Polyether Sulfone (PES). Such materials have numerous advantages as compared to the crystalline materials. Large area devices having desired organo-polymeric molecular structures in a thin film form can be produced for various optoelectronic and photonic applications. In the present investigation, PES a versatile high performance amorphous polymer that features with relatively high thermal stability, ability to retain optical transparency, electrical and mechanical properties up to 210ºC, good mold ability low dielectric constant and low water absorption was used. These features attracted this polymer to be a favorable host. m-NA is one of the important class of NLO active materials. A host guest system based on m-NA and PES susceptible to generate nonlinear optically (NLO) active properties was prepared scanning electron microscope and XRD for bulk properties evaluation and Nd:YAG laser studies for SHG signal evaluation. The effect of NLO active m-NA on the bulk and optical properties of PES were investigated. These studies provide a guideline for developing the host guest system based on m-NA and PES, in identifying the suitable composition showing SHG with laser radiation for optoelectronic devices. The purified m-NA was incorporated from 1-20 wt% in the PES polymer matrix by convectional solution casting method. Thin, transparent, freestanding films obtained were characterized with optical and other techniques. 

I-Mitra(आई-मित्र) Welcomes You..
It has always been the basic tenet of the Government of India, in generously funding R&D efforts at academic institutions over the years, that facilities established through such support be made available to those needing them and qualified to make use of them for their own research work

However, this was never easy or straightforward for, among other reasons, there was no ready source of information of what facility was available and where. Thanks to the Web, it is much easier today to have a national and regional “inventory of resources”, so as to match users with the resources they need, and to do all this in an efficient and transparent manner.

This can lead to a leap in R&D productivity and greatly enhance the effectiveness of public investment. This is the motivation behind I-STEM.
read less <<
Visitor Hit Counter
Hosted at Indian Institute of Science
Copyright © 2020 I-STEM. All rights reserved.
Audited by: STQC Bengaluru.