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Applicant:
Indian Institute of Technology (IIT) Roorkee 
Title:
Development of porous alumina film on conducting glass substrate to enhance the voltage of silicon based thermophotovoltaic devices. 
Inventor(s):
Anjan Sil and Soumya Shankar Ghosh 
Applicant:
Indian Institute of Technology (IIT) Roorkee 
Application type:
Applied - 2019-09-26 
Application Number:
201911038839 
Applied at:
India 
Entered by:
Indian Institute of Technology (IIT) Roorkee 
Abstract:
The present invention provides development of porous alumina film deposited over conducting surface on glass substrate for thermophotovoltaic application which acts as photonic crystal capable of increasing output voltage of silicon solar cell. The film pore size is in ~200-400nm, which matches with design wavelength. The porous alumina layer is insulating to heat and electricity. Porous layer can be developed by various techniques viz. organic template method, colloids formation etc. But formation of porous alumina layer over conducting glass slide should be maintained quite below 500°C, as fusion temperature of soda lime silicate glass is ~550°C. The porous alumina film following the design pattern can form photonic crystal. The preferred wavelength of emitted light will be about around1μm, which is the effective band gap energy of silicon semiconductors. Such films have the capability to increase output voltage of silicon solar panel once designed. 

 
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