Indian Science Technology and Engineering facilities Map
 
Supplier Map
Service Map

Patents

Patent Details

Applicant:
Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Bengaluru 
Title:
A Tellurium-Free n-Type Material, and Implementations Thereof  
Inventor(s):
Kanishka Biswas, Manisha Samanta 
Application type:
Applied - 2018-09-14 
Application Number:
201841034822 
Applied at:
India 
Entered by:
Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Bengaluru 
Abstract:
Realization of high thermoelectric (TE) performance in n-type semiconductors is of imperative need on account of the dearth of efficient n-type thermoelectric materials compared to the p-type counterpart. Moreover, development of efficient thermoelectric materials based on Te-free compound is desirable because of the scarcity of Te in the earth crust. Herein, we have invented the intrinsic ultralow thermal conductivity and high thermoelectric performance near room temperature in n-type BiSe and Bi1-xSbxSe, a Te-free solid, which recently has emerged as a weak topological insulator. BiSe possesses a layered structure consisting of a bismuth bilayer (Bi2) sandwiched between two Bi2Se3 quintuple layers [Se-Bi-Se-Bi-Se], resembling natural heterostructure. High thermoelectric performances of BiSe is realized through the ultralow lattice thermal conductivity (klat of ~ 0.6 W/mK at 300 K), which is significantly lower than that of Bi2Se3 (klat of ~ 1.8 W/mK at 300 K), although both of them belong to the same layered homologous family (Bi2)m(Bi2Se3)n. The experimental low-temperature specific heat data indicate that soft localized vibrations of bismuth bilayer in BiSe are responsible for its ultralow klat. Further optimization of thermoelectric properties of BiSe through Sb substitution and spark plasma sintering (SPS) results in high ZT ~ 0.8 at 425 K along the pressing direction, which is indeed remarkable among Te-free n-type thermoelectric materials near room temperature. 

 
THE VISION
THE MISSION
ABOUT I-STEM
It has always been the basic tenet of the Government of India, in generously funding R&D efforts at academic institutions over the years, that facilities established through such support be made available to those needing them and qualified to make use of them for their own research work
read more >>

However, this was never easy or straightforward for, among other reasons, there was no ready source of information of what facility was available and where. Thanks to the Web, it is much easier today to have a national and regional “inventory of resources”, so as to match users with the resources they need, and to do all this in an efficient and transparent manner.

This can lead to a leap in R&D productivity and greatly enhance the effectiveness of public investment. This is the motivation behind I-STEM.
read less <<
Visitor Hit Counter
Hosted at Indian Institute of Science
Copyright © 2024 I-STEM. All rights reserved.
Audited by: STQC Bengaluru.