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Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Bengaluru 
A p-Type Material, and Implementations Thereof  
Kanishka Biswas, Subhajit Roychowdhury, Tanmoy Ghosh 
Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Bengaluru 
Application type:
Applied - 2019-07-15 
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Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Bengaluru 
The realization of high thermoelectric (TE) performance in the low- to mid-temperature range (300−650 K) is imperative for the waste heat recovery applications. Herein, we report the excellent thermoelectric performance of Cd doped AgSbTe2 over a wide temperature range (300-600 K). We observed a significant enhancement in the room temperature thermoelectric figure of merit (zT) from 0.6 to 1.6 at 300 K in polycrystalline AgSbTe2 upon Cd doping and obtained a maximum zT (zTmax) of 2.6 at 573 K in polycrystalline AgSb0.94Cd0.06Te2. Moreover, we obtained a highest device figure of merit (ZTdev) of ~2 in polycrystalline AgSb0.94Cd0.06Te2 which outperforms all other state-of-the-art p-type thermoelectric materials in the 300 – 600 K temperature regimes. The unprecedented thermoelectric performance is attributed to the ultralow thermal conductivity caused by enhanced phonon scattering due to the formation of spontaneous nanoscale superstructure domains with chemical ordering in the cationic sublattice and high power factor stemming from high electrical conductivity augmented with high Seebeck coefficient resulting from valance band convergence. The obtained high zT in Cd doped polycrystalline AgSbTe2 materials over a wide temperature range also shows possibility of relieving the necessity of different materials for different temperature regimes with a single material starting from low- to mid-temperatures. This finding makes Pb- free Cd doped polycrystalline AgSbTe2 a promising candidate for thermoelectric applications in the room- and mid- temperature regimes. 

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