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Applicant:
Indian Institute of Technology (IIT) Patna 
Author:
L. K. Pradhan, M. Kar 
Corresponding Authors:
M. Kar 
DOI #:
https://doi.org/10.1063/1.5139293 
Title:
Scaling behavior of dynamic ferroelectric hysteresis for semiconductor–relaxor (0–3) type ZnO-(Bi0.5Na0.5)0.94Ba0.06TiO3 composite 
Journal:
Journal of Applied Physics  
Year:
2020 
Volume:
127 
Page:
104103 
Keywords:
dynamic ferroelectric hysteresis, semiconductor–relaxor 
Abstract:
Currently, semiconductor–relaxor ferroelectric (0–3) type composites are promising lead-free ferroelectric candidates for high-temperature piezoelectric applications. Among all, 0.30(ZnO)-0.70[(Bi0.5Na0.5)0.94Ba0.06TiO3] is one of the most studied composites by researchers. Therefore, to understand the role of ZnO on the polarization reversal process and domain states of (Bi0.5Na0.5)0.94Ba0.06TiO3, the dynamic ferroelectric hysteresis of the present composite has been investigated as a function of electric field amplitude (E0) and frequency (f). According to the power law, a set of scaling relations between the loop area ⟨A⟩ with E0 and f have been established for minor and saturated loops, which take the form of h i A / f 0:389E4:586 0 and h i A / f 0:021E1:066 0 , respectively. Also, it is interesting to note that the frequencydependent ferroelectric hysteresis loops [for the saturated field (E0) = 50 kV/cm] exhibit the unique two-stage scaling behavior. Additionally, the origin of enhancement in the domain switching process for minor loop regions has been correlated with the presence of a semiconductor (ZnO), which is extensively discussed in the present study. 
Entered by:
Venkata Dantham on 2020-08-02 
 
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