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Birla Institute of Technology and Science-Pilani Hyderabad Campus Secunderabad 
Venkatarao Selamneni, Sankalp Koduvayur Ganeshan 
Corresponding Authors:
Dr.Parikshit Sahatiya 
DOI #: 
All MoS2 based 2D/0D localized unipolar heterojunctions as flexible broadband (UV-vis-NIR) photodetectors 
Journal of Materials Chemistry C 
MoS2 QDs, 2D/0D heterojunction, broadband photodetector, Hydrothermal synthesis. 
This report demonstrates the fabrication of all MoS2 based 2D/0D unipolar heterojunctions using a simple one pot hydrothermal process and its utilization in flexible broadband photodetector covering the spectral range from ultraviolet to Near infrared. The discontinuous deposition of 0D MoS2 which has absorbance in UV region on 2D MoS2, having absorbance in visible and Near infrared (NIR) region allow for broadband detection. Further, contact engineering was performed wherein both the metal contacts were fabricated on 2D MoS2, thereby enabling effective capture of photogenerated carriers. Also, unipolar junction formed due to the Fermi level difference between 2D and 0D MoS2 provides localized electric field which help in efficacious separation of photogenerated electron-hole pairs. Responsivity of the fabricated photodetector was calculated to be 7.56 mA W-1, 12.8 mA W-1, and 3.95 mA W-1 in UV, visible and NIR region, respectively, indicating that the fabricated device is more sensitive towards visible region. A detailed understanding of the photodetection mechanism of this unique heterostructure is presented by bandgap theory and trap states. The successful demonstration of such a cost-effective, scalable 2D/0D based broadband photodetector finds potential applications in optoelectronics, security and wearable electronics. 
Entered by:
Venkatarao Selamneni on 2020-08-03 
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