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Applicant:
Central University of Tamil Nadu 
Author:
Gen Kamada, Gunasekaran Venugopal, Masato Kotsugi, Takuo Ohkochi, Maki Suemitsu, Hirokazu Fukidome 
Corresponding Authors:
Gunasekaran Venugopal 
DOI #:
10.1002/pssa.201800539 
Title:
Element- and Site-Specific Many-Body Interactions in Few-Layer MoS2 During X-Ray Absorption Processes 
Journal:
Phys. Status Solidi A 
Year:
2019 
Volume:
216 
Page:
1800539 
Keywords:
many-body interactions, X-ray absorption spectromicroscopy, Few-layer MoS2 transistor 
Abstract:
Few-layer MoS2 is a promising 2D material for nano-electronic device applications. However, the performance of these devices is often deteriorated. One of the reasons is that the electronic properties are influential to the many-body effects such as excitonic effects and Anderson orthogonality catastrophe (AOC) which could renormalize the band-dispersion and density of-states (DOS). Hence, the authors investigate the effect of many-body interactions on MoS2 device performance by using X-ray absorption spectromicroscopy (m-XAS) on a few-layer MoS2 transistor in operation, through the application of gate-bias or contact with a metal. The results show a significant peak shift in m-XAS spectra while varying the gate-bias. The applied negative gate-bias induces more holes which attracts excited electrons resulting strong many-body interactions followed by Fermi level shift. This effect is discussed with the aid of XAS-Auger electron phenomena. However, the AOC contribution in XAS peak-intensity is ignored since the bands around the energy-gap in MoS2 are relatively flat and the DOS is empty above Fermi level (unlike graphene). The authors observe a redshift in photon energy near the MoS2/metal-electrode interface due to charge transfer ensuring carrier-doping induced through metal-contact. These observations provide significant insight into element- and site-specific many-body interactions in MoS2 tunable by gate-bias or contact with a metal. 
Entered by:
Gunasekaran Venugopal on 2020-08-29 
 
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