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Applicant:
Central University of Tamil Nadu 
Author:
Venugopal Gunasekaran, Goon-Ho Park, Maki Suemitsu, Hirokazu Fukidome 
Corresponding Authors:
Venugopal Gunasekaran 
DOI #:
10.1016/j.mssp.2017.06.010 
Title:
Fabrication of multi-layer Bi2Se3 devices and observation of anomalous electrical transport behaviors 
Journal:
Materials Science in Semiconductor Processing 
Year:
2017 
Volume:
68 
Page:
128-132 
Keywords:
Bismuth selenide, electrical transport, space-charge limited conduction (SCLC), Fowler-Nordheim (F-N) tunneling , Poole-Frenkel (P-F) conduction,nonlinear behavior 
Abstract:
In this paper, we report on the fabrication of multi-layer bismuth selenide (Bi2Se3) devices by lithography process and their electrical transport characteristics studied at room temperature. The observation of a nonlinear current-voltage characteristic is analyzed with various current transport mechanisms such as Schottky barrier, space-charge limited conduction (SCLC), Fowler-Nordheim (F-N) tunneling and Poole-Frenkel (P-F) conduction. The F-N tunneling via field emission current induced in high-voltage was found to be the dominant conduction mechanism which could responsible for the nonlinear behavior as compared to SCLC and P-F conduction phenomena. The charge traps present in the Bi2Se3 bulk causes SCLC and P-F conduction. A carrier mobility in Bi2Se3 is extracted as ~ 1220 cm2 V−1 s−1. Our study further advances the understanding of the fundamental charge transport mechanisms appeared in Bi2Se3 which will be an essential parameter in the development of various electronic applications such as resistive memory switching and sensing devices. 
Entered by:
Gunasekaran Venugopal on 2020-08-30 
 
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