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Central University of Tamil Nadu 
M. J. S. Oliveira, J. P. B. Silva, Kateřina Veltruská, V. Matolín, K. C. Sekhar, J. Agostinho Moreira, M. Pereira, M. J. M Gomes 
Corresponding Authors:
J. P. B. Silva, K. C. Sekhar 
DOI #: 
Annealing induced effect on the physical properties of ion-beam sputtered 0.5 Ba (Zr0. 2Ti0. 8) O3–0.5 (Ba0. 7Ca0. 3) TiO3-δ ferroelectric thin films 
Applied Surface Science 
354 - 360 
Fatigue characteristics, (0.5BZT–0.5BCT) thin film, Ion-beam sputtering deposition technique, X-ray photoelectron spectroscopy 
This work reports thermal annealing induced effect on the structural, optical, chemical and ferroelectric properties of ion-beam sputtered lead-free ferroelectric 0.5 Ba(Zr0.2Ti0.8)O3 – 0.5 (Ba0.7Ca0.3)TiO3-δ (0.5BZT–0.5BCT) thin films. X-ray diffraction studies reveal that the tetragonality increases with the annealing temperature (Ta), while photoluminescence and X-ray photoelectron spectroscopy studies confirm that this effect is associated with the annihilation of the oxygen vacancies as well as changes in the Ba2+ coordination. The films annealed at 750 °C show a remarkable remnant polarization of Pr = 45.0 μC/cm2, with a coercive field of 32 kV/cm. The temperature dependence of the spontaneous polarization of the 0.5BZT–0.5BCT film reveals a mean field behavior of the polarization and the fatigue study reveals that Pr only decreases 3% after passing 109 cycles. Therefore the high remnant polarization and its high Pr stability make these films as promising candidates for memory applications. 
Entered by:
Koppole Chandra Sekhar on 2020-09-07 
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