Indian Science Technology and Engineering facilities Map
Supplier Map
Service Map


Publication Details

Central University of Tamil Nadu 
J. P. B. Silva, J. Wang, G. Koster, G. Rijnders, R. F. Negrea, C. Ghica, K. C. Sekhar, J. Agostinho Moreira, M. J. M Gomes 
Corresponding Authors:
J. P. B. Silva, K. C. Sekhar 
DOI #: 
Hysteretic Characteristics of Pulsed Laser Deposited 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3/ZnO Bilayers 
ACS applied materials & interfaces 
15240 - 15249 
Metal−ferroelectric−semiconductor structures, Interfacial coupling effect, Resistive switching, Capacitance−voltage characteristics, Ferroelectric properties 
In the present work, we study the hysteretic behavior in the electric-field-dependent capacitance and the current characteristics of 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (BCZT)/ZnO bilayers deposited on 0.7 wt % Nb-doped (001)-SrTiO3 (Nb:STO) substrates in a metal–ferroelectric–semiconductor (MFS) configuration. The X-ray diffraction measurements show that the BCZT and ZnO layers are highly oriented along the c-axis and have a single perovskite and wurtzite phases, respectively, whereas high-resolution transmission electron microscopy revealed very sharp Nb:STO/BCZT/ZnO interfaces. The capacitance–electric field (C–E) characteristics of the bilayers exhibit a memory window of 47 kV/cm and a capacitance decrease of 22%, at a negative bias. The later result is explained by the formation of a depletion region in the ZnO layer. Moreover, an unusual resistive switching (RS) behavior is observed in the BCZT films, where the RS ratio can be 500 times enhanced in the BCZT/ZnO bilayers. The RS enhancement can be understood by the barrier potential profile modulation at the depletion region, in the BCZT/ZnO junction, via ferroelectric polarization switching of the BCZT layer. This work builds a bridge between the hysteretic behavior observed either in the C–E and current–electric field characteristics on a MFS structure. 
Entered by:
Koppole Chandra Sekhar on 2020-09-07 
I-Mitra(आई-मित्र) Welcomes You..
It has always been the basic tenet of the Government of India, in generously funding R&D efforts at academic institutions over the years, that facilities established through such support be made available to those needing them and qualified to make use of them for their own research work

However, this was never easy or straightforward for, among other reasons, there was no ready source of information of what facility was available and where. Thanks to the Web, it is much easier today to have a national and regional “inventory of resources”, so as to match users with the resources they need, and to do all this in an efficient and transparent manner.

This can lead to a leap in R&D productivity and greatly enhance the effectiveness of public investment. This is the motivation behind I-STEM.
read less <<
Visitor Hit Counter
Hosted at Indian Institute of Science
Copyright © 2020 I-STEM. All rights reserved.
Audited by: STQC Bengaluru.