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Applicant:
Central University of Tamil Nadu 
Author:
J. P. B. Silva, F. L. Faita, K. Kamakshi, K. C. Sekhar, J. Agostinho Moreira, A. Almeida, M. Pereira, A. A. Pasa & M. J. M. Gomes  
Corresponding Authors:
J. P. B. Silva 
DOI #:
https://doi.org/10.1038/srep46350 
Title:
Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer 
Journal:
Scientific Reports 
Year:
2017 
Volume:
Page:
46350 
Keywords:
Resistive switching 
Abstract:
An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc = 140 °C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices. 
Entered by:
Koppole Chandra Sekhar on 2020-09-07 
 
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