Indian Science Technology and Engineering facilities Map
Supplier Map
Service Map

Publications

Publication Details

Applicant:
Central University of Tamil Nadu 
Author:
J. P. B. Silva, M. Vorokhta, F. Dvořák, K. C. Sekhar, V. Matolín, J. Agostinho Moreira, M. Pereira, M. J. M Gomes 
Corresponding Authors:
J. P. B. Silva 
DOI #:
https://doi.org/10.1016/j.apsusc.2016.12.092 
Title:
Unraveling the resistive switching effect in ZnO/0.5 Ba (Zr0. 2Ti0. 8) O3-0.5 (Ba0. 7Ca0. 3) TiO3 heterostructures 
Journal:
Applied Surface Science 
Year:
2017 
Volume:
400 
Page:
453 - 460 
Keywords:
Resistive switching, ZnO/0.5BZT-0.5BCT, Heterojunction, Charge coupling effect 
Abstract:
This work reports the effect of partial oxygen pressure, used in the deposition of the ZnO layer, on the band alignment at ZnO – 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) interface and on the resistive switching (RS) behavior of pulsed laser deposited ZnO/0.5BZT-0.5BCT heterostructures. X-ray photoelectron spectroscopy (XPS) has been employed to measure the valence band offset and the conduction band offset of the ZnO/0.5BZT-0.5BCT heterojunctions. The valence and conduction band offsets of the ZnO/0.5BZT-0.5BCT heterostucture with ZnO deposited at 10−2 mbar of partial oxygen pressure were found to be 0.27 and 0.80 eV, respectively. The RS effect in heterostructures is explained on the base of the charge coupling between the switchable polarization of ferroelectric layer and the non-switchable polarization of semiconductor layer. The heterostructure with ZnO deposited at 10−2 mbar of partial oxygen pressure displays optimum RS characteristics, with a switching ratio ≥ 104 and excellent retention and endurance characteristics. The optimum RS characteristics are attributed to a good interface quality with enough carrier concentration in ZnO, as evidenced by XPS. 
Entered by:
Koppole Chandra Sekhar on 2020-09-07 
 
I-Mitra(आई-मित्र) Welcomes You..
THE VISION
THE MISSION
ABOUT I-STEM
It has always been the basic tenet of the Government of India, in generously funding R&D efforts at academic institutions over the years, that facilities established through such support be made available to those needing them and qualified to make use of them for their own research work
read more >>

However, this was never easy or straightforward for, among other reasons, there was no ready source of information of what facility was available and where. Thanks to the Web, it is much easier today to have a national and regional “inventory of resources”, so as to match users with the resources they need, and to do all this in an efficient and transparent manner.

This can lead to a leap in R&D productivity and greatly enhance the effectiveness of public investment. This is the motivation behind I-STEM.
read less <<
Visitor Hit Counter
Hosted at Indian Institute of Science
Copyright © 2020 I-STEM. All rights reserved.
Audited by: STQC Bengaluru.