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Central University of Tamil Nadu 
J. P. B Silva, K. Kamakshi, K. C. Sekhar, X. R. Nóvoa, E. C. Queirós, J, Agostinho Moreira, A. Almeida, M. Pereira, P. B. Tavares, M. J. M Gomes 
Corresponding Authors:
J. P. B. Silva 
DOI #: 
Light controlled resistive switching and photovoltaic effects in ferroelectric 0.5 Ba (Zr0. 2Ti0. 8) O3-0.5 (Ba0. 7Ca0. 3) TiO3 thin films 
Journal of the European Ceramic Society 
583 - 591 
Light controlled resistive switching, Photovoltaic effect, Ferroelectricity, (0.5BZT-0.5BCT) thin films 
In this work, the structural and ferroelectric properties of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) thin films deposited at different pulse repetition rates were studied. The films deposited at pulse repetition rate of 1 Hz display the optimum values of ferroelectric polarization and dielectric permittivity and are chosen for the investigation of resistive switching and photovoltaic studies. The Pt/0.5BZT-0.5BCT/ITO capacitors show the electroforming free resistive switching (RS) and is explained based on the polarization modulation of the Schottky barrier at the 0.5BZT-0.5BCT/ITO interface. Furthermore, it is shown that the RS ratio and switching voltage can be tuned with white light illumination. The capacitors display photovoltaic effect with the open circuit voltage ≈0.8 V and the short circuit current density ≈72.6 μAcm−2. The photovoltaic efficiency is found to be ≈0.010% and is greater than that of other perovskite ferroelectric thin films. The underlying mechanism for enhanced RS and photovoltaic effects is highlighted. 
Entered by:
Koppole Chandra Sekhar on 2020-09-07 
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