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Applicant:
Birla Institute of Technology and Science-Pilani Hyderabad Campus Secunderabad 
Author:
Sankalp Koduvayur Ganeshan, Venkatarao Selamneni  
Corresponding Authors:
Dr. Parikshit Sahatiya 
DOI #:
https://doi.org/10.1039/D0NJ02053B 
Title:
Water dissolvable MoS2 quantum dots/PVA film as an active material for destructible memristors 
Journal:
New Journal of Chemistry 
Year:
2020 
Volume:
44 
Page:
11941--11948 
Keywords:
MoS2 QDs/PVA, polymer, quantum dots, memristor, transient electronics, water-soluble. 
Abstract:
This report demonstrates the fabrication of flexible, water-soluble MoS2 QDs/PVA (polyvinyl alcohol) film sandwiched between Cu electrodes as a resistive memory. The active material film (MoS2 QD/PVA) of the device exhibited outstanding water solubility, dissolving the active material completely in ~180 sec, making it a promising candidate for transient/destructible memories. The device exhibited significant merits with an ON/OFF ratio of ~150 with good cycling stability, excellent reproducibility, and data retention capability up to 1000 cycles. The memristive phenomena can be accounted for the charge trapping, de-trapping, and quantum tunneling effects observed in nanoscale MoS2 QDs. The successful fabrication of the water-soluble MoS2 QDs/PVA resistive RAM opens up new avenues and opportunities for the development of transient memory in the fields of military, security devices, and Intelligence applications. 
Entered by:
Venkatarao Selamneni on 2020-08-03 
 
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