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Applicant:
Indian Institute of Technology (IIT) Patna 
Author:
Singh, K., Kumar, K., Nayak, S., Joshi, D. C., Alom, M. M, Thota, S., Chowdhury, A 
Corresponding Authors:
Chowdhury A 
DOI #:
10.1088/1361-6463/aa939d 
Title:
Structural and Dielectric Properties of the Fluorite-Type LaxCe1− xO2-δ Ceramics 
Journal:
Journal of Physics D: Applied Physics 
Year:
2017 
Volume:
50 
Page:
495601 
Keywords:
Dielectric Properties 
Abstract:
High density (95–97%) Lax () ceramics were tested for structural and dielectric properties. Dense microstructure and controlled phase-purity were obtained for all the -doped samples. A surprising three-fold increase was noticed in the frequency dependent dielectric permittivity behavior for the ceramic, associated with the space-charge polarization at grain boundaries or inhomogeneous microstructure of the ceramic. High resistivity (~10⁸ Ωm) at room temperature was noticed for the ceramics (at 100 Hz). Hopping of electrons within the oxygen vacancies were noted as the main transport mechanism; strong localization of charge carriers were noticed at high frequencies. The temperature dependent ac-resistivity analysis (T) provides strong evidence for Mott's variable range hopping process of charge carriers, between the localized states with an average hopping length of RH of 3 nm and hopping energy of WH of 0.67 eV. Moreover, the effect of grains and grain boundaries on the correlation between ac-conductivity and angular-frequency ω has been discussed in detail.  
Entered by:
Venkata Dantham on 2020-08-04 
 
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