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Applicant:
Indian Institute of Technology (IIT) Patna 
Author:
N. Kamal, M. Panchore and J. Singh  
Corresponding Authors:
J. Singh 
DOI #:
10.1109/TDMR.2018.2811493 
Title:
3-D Simulation of Junction- and Doping-free Field-effect Transistor under Heavy Ion Irradiation 
Journal:
IEEE Transactions on Device and Materials Reliability 
Year:
2018 
Volume:
NA 
Page:
NA 
Keywords:
Junctionless transistor,doping-less transistor,single event upset,bipolar gain,collected charge,parasitic BJT action 
Abstract:
The growing concerns of soft error rates and single-event upset (SEU) due to ion-irradiation in sub-20 nm CMOS technology based field-effect transistors are the major challenges. Therefore, in this paper, we have investigated the doping-less junctionless transistor (DL-JLT) sensitivity toward heavy ion-irradiation and compared it with the conventional junctionless transistor (JLT) of channel length 15 nm. We observed the bipolar gain and total collected charges in both devices as a function of linear energy transfer. From TCAD simulations, it was observed that the DL-JLT has exhibited the Shockley-Read-Hall recombination rate and total collected charge due to ion strike ~ 4 orders and ~ 2 orders magnitude lower than the conventional JLT at VDS = 0.4 V, respectively. Similarly, bipolar gain and collected charge in DL-JLT under different circumstances are significantly (up to ~ 57x) lower than the conventional JLT that implies the radiation-hardened behavior of DL-JLT and less susceptibility against SEU. 
Entered by:
Venkata Dantham on 2020-08-04 
 
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