Indian Science Technology and Engineering facilities Map
Supplier Map
Service Map

Publications

Publication Details

Applicant:
Central University of Tamil Nadu 
Author:
V. Gunasekaran, M.K. Devarajub, S. Yuvaraj, V.J.Y. Surya, Varu Singh, K. Karthikeyan, S.-J. Kim 
Corresponding Authors:
V. Gunasekaran  
DOI #:
10.1016/j.mssp.2017.04.011 
Title:
Electrical transport properties of two-dimensional MoS2 nanosheets synthesized by novel method 
Journal:
Materials Science in Semiconductor Processing 
Year:
2017 
Volume:
66 
Page:
81-86 
Keywords:
MoS2 nanosheets, Supercritical Fluid Method, space-charge limited conduction, Fowler-Nordheim tunneling, Poole-Frenkel conduction, Raman mapping, non-linear current-voltage 
Abstract:
In this work, we have reported the electrical transport properties of two-dimensional molybdenum disulfide (MoS2) nanosheets prepared by supercritical fluid method. Drop-casting technique has been used to make MoS2 thinfilm. The surface morphology and crystallinity of as-prepared MoS2 are studied using TEM, AFM, Raman and X-ray diffraction analyses. The observation of non-linear current-voltage (I-V) characteristics has been analyzed with different current conduction mechanisms such as Schottky barrier (SB), space-charge limited conduction, Fowler-Nordheim tunneling, and Poole-Frenkel conduction. Clear symmetricity in I-V curves confirms that charge-transport is not influenced by SB. However, all other transport mechanisms are to be found responsible for the non-linearity. The charge carrier mobility of the device is determined as ~1530 cm2/V s which is the highest value among supercritical fluid processed MoS2 to-date. The presence of bulk counterpart in MoS2 is accountable for such anomalous transport behavior and it is supported by Raman mapping analysis, evidently. Overall, our results demonstrate the understanding of the fundamental charge transport mechanisms in MoS2 thinfilm that can be the essential factors in development of various MoS2 based electronic devices and their applications. 
Entered by:
Gunasekaran Venugopal on 2020-08-30 
 
I-Mitra(आई-मित्र) Welcomes You..
THE VISION
THE MISSION
ABOUT I-STEM
It has always been the basic tenet of the Government of India, in generously funding R&D efforts at academic institutions over the years, that facilities established through such support be made available to those needing them and qualified to make use of them for their own research work
read more >>

However, this was never easy or straightforward for, among other reasons, there was no ready source of information of what facility was available and where. Thanks to the Web, it is much easier today to have a national and regional “inventory of resources”, so as to match users with the resources they need, and to do all this in an efficient and transparent manner.

This can lead to a leap in R&D productivity and greatly enhance the effectiveness of public investment. This is the motivation behind I-STEM.
read less <<
Visitor Hit Counter
Hosted at Indian Institute of Science
Copyright © 2020 I-STEM. All rights reserved.
Audited by: STQC Bengaluru.